0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features 625mw power dissipation. i c cont 2.5a. i c up to 10a peak pulse current. excellent hfe characteristics up to 10a (pulsed). extremely low saturation voltage e.g. 10mv typ.. exhibits extremely low equivalent on-resistance; r ce(sat) . absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -70 v collector-emitter voltage v ceo -70 v emitter-base voltage v ebo -5 v peak collector current i cm -3 a collector current i c -1.5 a base current i b -500 ma power dissipation p tot 625 mw operating and storage temperature range t j, t stg -55to+150 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type transistors FMMT722 smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type s m d ty p e r a n s i s t o r product specification 4008-318-123
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a -70 -150 v collector-emitter breakdown voltage * v (br)ceo i c =-10ma -70 -125 v emitter-base breakdown voltage v (br)ebo i e =-100a -5 -8.8 v collector cutoff current i cbo v cb =-60v -100 na emitter cut-off current i ebo v eb =-4v -100 na collector-emitter saturation voltage * v ce( sat) i c =-0.1a, i b =-10ma i c =-0.5a, i b =-20ma i c =-1a, i b =-100ma i c =-1.5a, i b =-200ma -35 -135 -140 -175 -50 -200 -220 -260 mv base-emitter saturation voltage * v be( sat) i c =-1.5a,i b =-200ma 0.94 -1.05 v base-emitter voltage * v be(on) i c =-1.5a,v ce =-5v -0.78 -1.0 v dc current gain * h fe i c =-10ma, v ce =-5v i c =-0.1a, v ce =-5v i c =-1a, v ce =-5v i c =-1.5a, v ce =-5v 300 300 175 40 470 450 275 60 current-gain-bandwidth product f t i c =-50ma,v ce =-10v,f=100mhz 150 200 mhz output capacitance c obo v cb =-10v,f=1mhz 14 20 pf turn-on time t (on) v cc =-50v, i c =-0.5a 40 ns turn-off time t (off) i b1 =-i b2 =-50ma 700 ns * pulse test: tp 300s; d 0.02. FMMT722 marking marking 722 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type s m d ty p e r a n s i s t o r product specification 4008-318-123
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